A first-order behavioral IGBT/gate drive model is proposed together with a procedure for deriving all model parameters. Despite the simplicity of the proposed model, comparison of model predictions with hardware measurements demonstrate the model to be accurate in predicting turn-on and turn-off transients
J. L. Drewniak et al., "Behavioral IGBT Modeling for Predicting High Frequency Effects in Motor Drives," IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers (IEEE), Jan 2000.
The definitive version is available at http://dx.doi.org/10.1109/63.838108
Electrical and Computer Engineering
Keywords and Phrases
IGBT Modeling; First-Order Behavioral IGBT/Gate Drive Model; Hardware Measurements; High Frequency Effects Prediction; High-Frequency Effects; Insulated Gate Bipolar Transistors; Model Parameters Derivation; Motor Drives; Semiconductor Device Models; Transients; Turn-Off Transients Prediction; Turn-On Transients Prediction
International Standard Serial Number (ISSN)
Article - Journal
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