Abstract

A first-order behavioral IGBT/gate drive model is proposed together with a procedure for deriving all model parameters. Despite the simplicity of the proposed model, comparison of model predictions with hardware measurements demonstrate the model to be accurate in predicting turn-on and turn-off transients

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

IGBT Modeling; First-Order Behavioral IGBT/Gate Drive Model; Hardware Measurements; High Frequency Effects Prediction; High-Frequency Effects; Insulated Gate Bipolar Transistors; Model Parameters Derivation; Motor Drives; Semiconductor Device Models; Transients; Turn-Off Transients Prediction; Turn-On Transients Prediction

International Standard Serial Number (ISSN)

0885-8993

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2000 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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