Abstract

A first-order behavioral IGBT/gate drive model is proposed together with a procedure for deriving all model parameters. Despite the simplicity of the proposed model, comparison of model predictions with hardware measurements demonstrate the model to be accurate in predicting turn-on and turn-off transients.

Department(s)

Electrical and Computer Engineering

Sponsor(s)

University of South Carolina
United States. Office of Naval Research

Comments

This work was supported by the University of South Carolina under Grant N00014-96-1-0926 with the Office of Naval Research.

Keywords and Phrases

IGBT Modeling; First-Order Behavioral IGBT/Gate Drive Model; Hardware Measurements; High Frequency Effects Prediction; High-Frequency Effects; Insulated Gate Bipolar Transistors; Model Parameters Derivation; Motor Drives; Semiconductor Device Models; Transients; Turn-Off Transients Prediction; Turn-On Transients Prediction; Bipolar Transistors; Computer Simulation; Electric Motors; Frequency Response; Parameter Estimation; Semiconductor Device Structures; Transients; Insulate Gates Bipolar Transistor; Turn Off Transients; Turn On Transients; Electric Drives

International Standard Serial Number (ISSN)

0885-8993;1941-0107

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2000 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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