Abstract

The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed

Meeting Name

7th International Conference on Indium Phosphide and Related Materials, 1995

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

AP-MOVPE Growth; III-V Semiconductors; InP; PCl 3; PCl 3 Influence; [100] Direction Growth Suppression; [311] Direction Growth Enhancement; Atmospheric Pressure MOVPE; Dielectric Masks; Indium Compounds; Mesa Structures; Planar Regrowth; Polycrystalline Deposit Suppression; Regrowth Planarisation; Regrowth Selectivity; Scanning Electron Microscopy; Semiconductor Growth; Surface Structure; Vapour Phase Epitaxial Growth

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1995 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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