Abstract

The effect of defects within a single cell of a static random access memory (SRAM) is examined. All major types of faults, including bridging, transistor stuck-open and stuck-on, are examined. A significant fraction of all faults cause high IDDQ values to be observed. Faults leading to inter-cell coupling are identified.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

CMOS SRAM; CMOS Integrated Circuits; IDDQ Values; SRAM Chips; Bridging; Defects; Fault Location; Fault Models; Intercell Coupling; Intra-Cell Defects; Semiconductor Device Models; Static Random Access Memory; Stuck-On Faults; Transistor Stuck-Open

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1993 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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