Abstract
Currents associated with high-speed digital devices have significant impacts on EMI problems in VLSI design and operation. In this paper, a simple transmission line model was implemented as an initial step to represent the EMI mechanisms associated with an IC package. Numerical modeling results were compared with near field scanning measurements and show that the magnetic field deduced from the measurements agrees well with the numerical predictions.
Recommended Citation
L. Zhang et al., "Field Extraction from Near Field Scanning for a Microstrip Structure," Proceedings of the IEEE International Symposium on Electromagnetic Compatibility (2002, Minneapolis, MN), vol. 2, pp. 589 - 592, Institute of Electrical and Electronics Engineers (IEEE), Aug 2002.
The definitive version is available at https://doi.org/10.1109/ISEMC.2002.1032657
Meeting Name
IEEE International Symposium on Electromagnetic Compatibility (2002: Aug. 19-23, Minneapolis, MN)
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
EMI Mechanisms; EMI Problems; IC Package; VLSI; VLSI Design; VLSI Operation; Electromagnetic Compatibility; Electromagnetic Interference; High-Speed Digital Devices; Integrated Circuit Modelling; Integrated Circuit Packaging; Integrated Circuit Testing; Magnetic Field; Magnetic Fields; Microstrip Lines; Microstrip Structure; Near Field Scanning Measurements; Numerical Modeling; Transmission Line Model; Transmission Line Theory; Microstrip; Near Field Scanning
International Standard Book Number (ISBN)
780372646
International Standard Serial Number (ISSN)
0190-1494
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2002 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Aug 2002
