Abstract

A variety of power devices are available to designers, each with specific advantages and limitations. For inverters, typically an IGBT combined with a p-i-n diode is used to obtain high current density. Recent developments in high-voltage MOSFETs support other alternatives. For example, a MOSFET can be paralleled with an IGBT to reduce losses at low currents, while the IGBT carries the load at high currents. The current work evaluates conduction losses in this configuration, showing applicability to generic inverters.

Meeting Name

2004 IEEE Industry Applications Conference, 2004 39th IAS Annual Meeting

Department(s)

Electrical and Computer Engineering

Sponsor(s)

Grainger CEME

Keywords and Phrases

IGBT; MOSFET; Conduction Loss; Inverters; P-I-N Diode; Power Devices

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2004 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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