Abstract

A variety of power devices are available to designers, each with specific advantages and limitations. For inverters, typically an IGBT combined with a p-i-n diode is used to obtain high current density. Recent developments in high-voltage MOSFETs support other alternatives. For example, a MOSFET can be paralleled with an IGBT to reduce losses at low currents, while the IGBT carries the load at high currents. The current work evaluates conduction losses in this configuration, showing applicability to generic inverters.

Meeting Name

IEEE Industry Applications Conference/39th IAS Annual Meeting (2004: Oct. 3-7, Seattle, WA)

Department(s)

Electrical and Computer Engineering

Sponsor(s)

Grainger CEME

Comments

The authors acknowledge the Grainger Center for Electric Machinery and Electromechanics for sponsoring the project.

Keywords and Phrases

IGBT; MOSFET; Conduction Loss; Inverters; P-I-N Diode; Power Devices; Current Density; Electric Breakdown; Electric Inverters; Electric Losses; Electric Switches; Insulated Gate Bipolar Transistors; Thermal Load; Switching Loss; Thermal Response; MOSFET Devices

International Standard Book Number (ISBN)

780384865

International Standard Serial Number (ISSN)

0197-2618

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2004 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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