A variety of power devices are available to designers, each with specific advantages and limitations. For inverters, typically an IGBT combined with a p-i-n diode is used to obtain high current density. Recent developments in high-voltage MOSFETs support other alternatives. For example, a MOSFET can be paralleled with an IGBT to reduce losses at low currents, while the IGBT carries the load at high currents. The current work evaluates conduction losses in this configuration, showing applicability to generic inverters.
J. W. Kimball and P. L. Chapman, "Evaluating Conduction Loss of a Parallel IGBT-MOSFET Combination," Conference Record of the 2004 IEEE Industry Applications Conference, 2004 39th IAS Annual Meeting, Institute of Electrical and Electronics Engineers (IEEE), Oct 2004.
The definitive version is available at http://dx.doi.org/10.1109/IAS.2004.1348570
2004 IEEE Industry Applications Conference, 2004 39th IAS Annual Meeting
Electrical and Computer Engineering
Keywords and Phrases
IGBT; MOSFET; Conduction Loss; Inverters; P-I-N Diode; Power Devices
Article - Conference proceedings
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