"The pulse-height defect (PHD) of high-energy heavy ions in silicon surface-barrier detectors can be divided into three components: (1) energy loss in the gold-surface layer, (2) a nuclear-stopping defect, and (3) a defect due to recombination of electron-hole pairs in the plasma created by the heavy ion. The plasma recombination portion of the PHD was the subject of this study using the variation of the PHD with (1) the angle of incidence of incoming heavy ions, and (2) changes in the detector bias. The Tandem Van de Graaff accelerator at Argonne National Laboratory was used to produce scattered beam ions (32S, 35Cl) and heavy target recoils (Ni, Cu, 98Mo, Ag, Au) at sufficient energies to produce a significant recombination defect. The results confirm the existence of a recombination zone at the front surface of these detectors and the significance of plasma recombination as a portion of the pulse-height defect"--Abstract, page ii.
Hardtke, Fred C.
Manuel, O. (Oliver), 1936-
Webb, William H.
Edwards, D. R.
Bolon, Albert E., 1939-2006
Ph. D. in Chemistry
U. S. Atomic Energy Commission
University of Missouri--Rolla
xi, 127 pages
© 1973 Gregory Dan Smith, All rights reserved.
Dissertation - Restricted Access
Library of Congress Subject Headings
Heavy ion accelerators
Heavy ion collisions
Pulse height analyzers
Print OCLC #
Electronic OCLC #
Link to Catalog RecordElectronic access to the full-text of this document is restricted to Missouri S&T users. Otherwise, request this publication directly from Missouri S&T Library or contact your local library. http://laurel.lso.missouri.edu/record=b1066871~S5
Smith, Gregory Dan, "A study of the pulse-height response of silicon surface-barrier detectors to high-energy heavy ions" (1973). Doctoral Dissertations. 248.
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