"A variational approach has been used to solve the effective-mass equation, when the impurity ion is located at a depth d from the surface of a semiconductor, where 0 < d < db and db represents the case when the impurity ion is in the bulk of the semiconductor. The ground state and the excited state having the largest electric dipole coupling to the ground state have been determined. We have plotted the energy dependence on the depth of the impurity ion from the surface of the semiconductor. The energy has also been calculated as a function of the orientation of the c-axis of the mass-ellipsoid to the surface of the semi conductor. Finally, the optical absorption coefficient for transitions from the ground state to the excited state has been calculated for the surface, bulk and the near surface states"--Abstract, page ii.
Tefft, Wayne E., 1929-1973
Bell, Robert John, 1934-
Rivers, Jack Lewis
Brown, Harry Allen
Penico, Anthony Joseph
Ph. D. in Physics
University of Missouri--Rolla
vii, 76 pages
© 1970 Vidal Emmanuel Godwin, All rights reserved.
Dissertation - Open Access
Library of Congress Subject Headings
Semiconductors -- Impurity distribution
Effective mass (Physics)
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b1066955~S5
Godwin, Vidal Emmanuel, "Theory of shallow donor impurity surface states" (1970). Doctoral Dissertations. 2311.