Doctoral Dissertations

Abstract

"A variational approach has been used to solve the effective-mass equation, when the impurity ion is located at a depth d from the surface of a semiconductor, where 0 < d < db and db represents the case when the impurity ion is in the bulk of the semiconductor. The ground state and the excited state having the largest electric dipole coupling to the ground state have been determined. We have plotted the energy dependence on the depth of the impurity ion from the surface of the semiconductor. The energy has also been calculated as a function of the orientation of the c-axis of the mass-ellipsoid to the surface of the semi conductor. Finally, the optical absorption coefficient for transitions from the ground state to the excited state has been calculated for the surface, bulk and the near surface states"--Abstract, page ii.

Advisor(s)

Tefft, Wayne E., 1929-1973

Committee Member(s)

Bell, Robert John, 1934-
Rivers, Jack Lewis
Brown, Harry Allen
Penico, Anthony Joseph

Department(s)

Physics

Degree Name

Ph. D. in Physics

Publisher

University of Missouri--Rolla

Publication Date

1970

Pagination

vii, 76 pages

Note about bibliography

Includes bibliographical references (page 60).

Rights

© 1970 Vidal Emmanuel Godwin, All rights reserved.

Document Type

Dissertation - Open Access

File Type

text

Language

English

Library of Congress Subject Headings

Semiconductors -- Impurity distribution
Effective mass (Physics)

Thesis Number

T 2396

Print OCLC #

6022698

Electronic OCLC #

853449366

Included in

Physics Commons

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