"This paper presents a derivation of the recombination statistical model for the neutron-induced base current component. The derivation was based on the assumptions: 1) the current equation for the induced current component developed by Goben is valid; 2) the Shockley-Read-Hall statistics for holes and electrons are applicable; and 3) the recombination statistics derived by Sah, Noyce and Shockley, for sites in the bulk space-charge region are valid. Several examples were presented to emphasize accuracy of this derived model for predictions. This paper shows that the recombination process may be described by a mathematical model, recombination statistics which depend on the diffusion potential, the junction voltage, the activation energy, and the capture cross-sections for holes and electrons. This paper also shows that the statistical model will predict the correct value for n when the model is accurately fitted to the physical process. Temperature dependence of this reciprocal slope term was involved explicitly in the statistics model. Examples are presented to illustrate the utility of such a recombination statistical model in predicting the base current for p-n junction transistors with considerable accuracy"--Abstract, page iii.
Goben, C. A.
Pagano, Sylvester J., 1924-2006
Charlson, E. J.
Betten, J. Robert
Dillman, Norman G., 1938-2010
Bain, Lee J., 1939-
Electrical and Computer Engineering
Ph. D. in Electrical Engineering
U.S. Atomic Energy Commission
University of Missouri--Rolla
viii, 76 pages, 72 pages
© 1968 Ming-Chwan Chow, All rights reserved.
Dissertation - Open Access
Library of Congress Subject Headings
Semiconductors -- Effect of radiation on
Semiconductors -- Recombination
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b1067683~S5
Chow, Ming-Chwan, "Recombination statistics for the neutron-induced base current component" (1968). Doctoral Dissertations. 2249.