"This work is concerned with the problem of developing suitable mathematical representations for the pn junction diode and npn and pnp transistors for use in computer aided design and analysis programs. The Ebers-Moll model as used in the Net-1 program has been considerably improved, particularly regarding base resistance prediction, prediction of high forward current behavior, and the addition of reverse breakdown terms. The resulting models show substantial improvement in representation of d-c and transient characteristics. Some improvement in a-c characteristics has also been obtained. Methods of obtaining parameters for the new model and several of the present models, given measured device characteristics, are also described. Physical device operation is described to the extent necessary to justify the assumptions made in model formulation"--Abstract, page ii.
Kern, Frank J.
Goben, C. A.
Pazdera, John S., 1941-1974
Alcorn, Herbert R., 1933-2008
Carson, Ralph S.
Electrical and Computer Engineering
Ph. D. in Electrical Engineering
University of Missouri--Rolla
ix, 227 pages
© 1969 Glenn Ronald Case, All rights reserved.
Dissertation - Open Access
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Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b1067470~S5
Case, Glenn Ronald, "Models for the pn diode and the npn and pnp transistor for use in computer aided design and analysis programs" (1969). Doctoral Dissertations. 2215.