Doctoral Dissertations

Title

Analysis of laser diode bar degradation

Abstract

"Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages"--Abstract, leaf iii.

Advisor(s)

Olson, Ronald E.

Committee Member(s)

Stephens, Edward F.
Peacher, Jerry
DuBois, R. D. (Robert D.), 1951-
Leventhal, Jacob J. (Jacob Joseph), 1937-

Department(s)

Physics

Degree Name

Ph. D. in Physics

Sponsor(s)

Northrop Grumman Information Technology (Firm)

Publisher

University of Missouri--Rolla

Publication Date

Fall 2006

Pagination

xi, 111 leaves

Note about bibliography

Includes bibliographical references (leaves 109-110).

Rights

© 2006 C. Ryan Feeler, All rights reserved.

Document Type

Dissertation - Citation

File Type

text

Language

English

Library of Congress Subject Headings

Diodes, Semiconductor
Light emitting diodes -- Reliability
Semiconductor lasers -- Reliability

Thesis Number

T 9053

Print OCLC #

173643894

Link to Catalog Record

Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.

http://laurel.lso.missouri.edu/record=b6000116~S5

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