Doctoral Dissertations

Title

Development of Ti-Si-N and Ta-Si-N as diffusion barriers

Author

Shaoxin You

Keywords and Phrases

Diffusion barrier

Abstract

"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere"--Abstract, leaf iv.

Department(s)

Materials Science and Engineering

Degree Name

Ph. D. in Materials Science and Engineering

Publisher

University of Missouri--Rolla

Publication Date

Spring 2006

Journal article titles appearing in thesis/dissertation

  • Characterization of reactively sputtered Ti-Si-N films
  • Development of Ti-Si-N thin films as diffusion barriers between Cu and Si
  • Development of Ta-Si-N thin films as diffusion barriers between Cu and Si
  • Use of experimental design to improve the adhesion strength in Meso-MEMS RF switches

Pagination

xix, 175 leaves

Note about bibliography

Includes bibliographical references.

Rights

© 2006 Shaoxin You, All rights reserved.

Document Type

Dissertation - Citation

File Type

text

Language

English

Library of Congress Subject Headings

Sputtering (Physics)
Diffusion
Metallizing
Titanium
Tantalum
Silicon
Nitrogen

Thesis Number

T 8837

Print OCLC #

74843529

Link to Catalog Record

Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.

http://laurel.lso.missouri.edu/record=b5707704~S5

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