Development of Ti-Si-N and Ta-Si-N as diffusion barriers
Keywords and Phrases
"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere"--Abstract, leaf iv.
Materials Science and Engineering
Ph. D. in Materials Science and Engineering
University of Missouri--Rolla
Journal article titles appearing in thesis/dissertation
- Characterization of reactively sputtered Ti-Si-N films
- Development of Ti-Si-N thin films as diffusion barriers between Cu and Si
- Development of Ta-Si-N thin films as diffusion barriers between Cu and Si
- Use of experimental design to improve the adhesion strength in Meso-MEMS RF switches
xix, 175 leaves
© 2006 Shaoxin You, All rights reserved.
Dissertation - Citation
Library of Congress Subject Headings
Print OCLC #
Link to Catalog Record
Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.http://laurel.lso.missouri.edu/record=b5707704~S5
You, Shaoxin, "Development of Ti-Si-N and Ta-Si-N as diffusion barriers" (2006). Doctoral Dissertations. 1639.
This document is currently not available here.