Quantitative non-destructive study of sub-micron defects in very large scale integrated-circuit silicon using transmitted and reflected infra-red laser scattering
"The limits and capabilities of the Scanning Infra-Red Microscope (SIRM) and the Optical Precipitate Profiler (OPP) to detect oxygen precipitate defects in silicon were investigated. Two sets of specimens were made and studied. One set had wafers containing the same bulk defect density, but had different precipitate growth thermal treatments. These treatments resulted in defects of different mean sizes ranging form 30 to 150 nm. The other set had defects of approximately the same size, but they had different defect densities ranging from about 1 x 10⁹ defects/cm³ to 1 x 10¹¹ defects/cm³. The first set was carefully characterized by transmission electron microscopy (TEM) to obtain an accurate size distribution of the defects in each sample. The defect densities were then measured by the OPP, the SIRM, and the cleave-and-etch technique and compared with the TEM measurements. In the second sample the defect density was measured only by the cleave-and-etch technique and then by the SIRM"--Abstract, leaf iii.
Hale, Edward Boyd
Holzer, J. C.
James, W. J.
Pringle, Oran Allan
Ph. D. in Physics
MEMC Electronic Materials
University of Missouri--Rolla
xvi, 171 leaves
© 1996 Luciano Mule'Stagno, All rights reserved.
Dissertation - Citation
Library of Congress Subject Headings
Laser beams -- Scattering
Silicon crystals -- Growth
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Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.http://laurel.lso.missouri.edu/record=b3589394~S5
Mule'Stagno, Luciano, "Quantitative non-destructive study of sub-micron defects in very large scale integrated-circuit silicon using transmitted and reflected infra-red laser scattering" (1996). Doctoral Dissertations. 1171.
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