Title

Soluble Hard Mask for Interlayer Dielectric Patterning

Abstract

Described herein are embodiments of a method that includes forming a hard mask over an interlayer dielectric layer, patterning said hard mask, etching said interlayer dielectric layer, and removing said hard mask during a post-etch clean with a wet etchant having a selectivity to etch said hard mask at a greater rate than said interlayer dielectric layer.

Department(s)

Civil, Architectural and Environmental Engineering

Patent Application Number

11/643483

Patent Number

US 7,659,196 B2

Document Type

Patent

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2010 Intel Corporation, All rights reserved.

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