Hard Mask for Low-k Interlayer Dielectric Patterning
Described herein are embodiments of a hard mask including a surface to reduce adhesion to an anti-reflective material deposited on a surface, wherein the surface to reduced adhesion provides use of a process to remove the anti-reflective material deposited on the surface that minimizes damage to an interlayer dielectric layer below the hard mask and methods of manufacturing the same.
T. V. Mule and M. Abdelrahman, "Hard Mask for Low-k Interlayer Dielectric Patterning," Intel Corporation, Jan 2010.
Civil, Architectural and Environmental Engineering
Patent Application Number
© 2010 Intel Corporation, All rights reserved.