Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

Department(s)

Chemistry

International Standard Serial Number (ISSN)

10980121

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2008 American Physical Society (APS), All rights reserved.

Included in

Chemistry Commons

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