Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor
We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity. © 2008 The American Physical Society.
R. Hu and K. J. Thomas and Y. Lee and T. Vogt and E. S. Choi and V. F. Mitrović and R. P. Hermann and F. Grandjean and P. C. Canfield and J. W. Kim and A. I. Goldman and C. Petrovic, "Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor," Physical Review B - Condensed Matter and Materials Physics, American Physical Society (APS), Jan 2008.
The definitive version is available at http://dx.doi.org/10.1103/PhysRevB.77.085212
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© 2008 American Physical Society (APS), All rights reserved.