Title

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity. © 2008 The American Physical Society.

Department(s)

Chemistry

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2008 American Physical Society (APS), All rights reserved.


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