Title

Resistance Switching in Electrodeposited VO 2 Thin Films

Abstract

Films of VO 2 are deposited by electrochemically reducing a triethanolamine complex of V(V) in an aqueous solution, followed by a short anneal at 400 °C. The VO 2 undergoes a metal-to-insulator transition (MIT) at 322 K, and exhibits sharp resistance switching at room temperature with very low current (0.5 mA) and voltage (0.12 V) requirements. The electrodeposition method opens up inexpensive possibilities for the fabrication of ultrafast switches, Mott field effect transitions, memristors, and solid-state memory. © 2011 American Chemical Society.

Department(s)

Chemistry

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 American Chemical Society (ACS), All rights reserved.


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