Epitaxial Lift-Off of Electrodeposited Single-Crystal Gold Foils for Flexible Electronics
Abstract
We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiOx layer was achieved by photoelectrochemically oxidizing silicon under light irradiation. A 28-nanometer-thick gold foil with a sheet resistance of 7 ohms per square showed only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spin-coated on a foil exploited the transmittance and flexibility of the gold foil. Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalline deposit. Zinc oxide nanowires electrodeposited epitaxially on a gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.
Recommended Citation
N. K. Mahenderkar et al., "Epitaxial Lift-Off of Electrodeposited Single-Crystal Gold Foils for Flexible Electronics," Science, vol. 355, no. 6330, pp. 1203 - 1206, American Association for the Advancement of Science (AAAS), Mar 2017.
The definitive version is available at https://doi.org/10.1126/science.aam5830
Department(s)
Chemistry
Second Department
Materials Science and Engineering
Keywords and Phrases
Cuprous Oxide; Gold; Ruthenium Complex; Silicon, Crystal Structure; Electrical Method; Electrochemical Method; Electronic Equipment; Gold; Nanoparticle; Nanotechnology; Transmittance, Article; Crystal Structure; Electrochemistry; Electrodeposition; Electron Microscopy; Electronics; Light Emitting Diode; Photochemistry; Priority Journal; Semiconductor
International Standard Serial Number (ISSN)
0036-8075; 1095-9203
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2017 American Association for the Advancement of Science (AAAS), All rights reserved.
Publication Date
01 Mar 2017
Comments
The material is based on work supported by the U.S. Department of Energy, Office of Basic Sciences, Division of Materials Sciences and Engineering, under grants DE-FG02-08ER46518 (J.A.S.) and DE-SC0008799 (E.C.).