Epitaxial Lift-Off of Electrodeposited Single-Crystal Gold Foils for Flexible Electronics
We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiOx layer was achieved by photoelectrochemically oxidizing silicon under light irradiation. A 28-nanometer-thick gold foil with a sheet resistance of 7 ohms per square showed only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spin-coated on a foil exploited the transmittance and flexibility of the gold foil. Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalline deposit. Zinc oxide nanowires electrodeposited epitaxially on a gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.
N. K. Mahenderkar et al., "Epitaxial Lift-Off of Electrodeposited Single-Crystal Gold Foils for Flexible Electronics," Science, vol. 355, no. 6330, pp. 1203-1206, American Association for the Advancement of Science (AAAS), Mar 2017.
The definitive version is available at https://doi.org/10.1126/science.aam5830
Materials Science and Engineering
Keywords and Phrases
Cuprous Oxide; Gold; Ruthenium Complex; Silicon, Crystal Structure; Electrical Method; Electrochemical Method; Electronic Equipment; Gold; Nanoparticle; Nanotechnology; Transmittance, Article; Crystal Structure; Electrochemistry; Electrodeposition; Electron Microscopy; Electronics; Light Emitting Diode; Photochemistry; Priority Journal; Semiconductor
International Standard Serial Number (ISSN)
Article - Journal
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