Title

Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony

Abstract

Monocrystalline dislocation-free silicon, having an antimony concentration of from 3 × 1018 to 9 × 1018 atoms per cm3, was investigated by Mössbauer spectrometry at 80°K using the 37.2 keV γ-ray of 121Sb. A single line pattern was found, with a line width of 2.5 mm/sec and an isomer shift varying from 1.32 mm/sec to 0.68 mm/sec (referred to InSb) over the indicated range. The lattice parameter for material increased from 5.43045 Å to 5.43099 Å over the same range. The variation in isomer shift may be due to the lattice expansion.

Department(s)

Chemistry

Second Department

Physics

International Standard Serial Number (ISSN)

0038-1098

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1971 Elsevier Limited, All rights reserved.

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