Title

Reentrant High-conduction State in CuIr₂S₄ under Pressure

Abstract

The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.

Department(s)

Chemistry

Keywords and Phrases

Conduction bands; Correlation methods; Electric resistance; Pressure effects; X ray diffraction analysis; Angle dispersive X-ray diffraction measurements; Chalcogenide spinel; Conducting phase; Copper compounds; A. Inorganic compounds; B. X-ray diffraction; C. Electric transport; D. High pressure

International Standard Serial Number (ISSN)

0038-1098

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2007 Elsevier, All rights reserved.


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