Reentrant High-conduction State in CuIr₂S₄ under Pressure
The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.
A. B. Garg et al., "Reentrant High-conduction State in CuIr₂S₄ under Pressure," Solid State Communications, vol. 142, no. 7, pp. 369-372, Elsevier, May 2007.
The definitive version is available at http://dx.doi.org/10.1016/j.ssc.2007.03.029
Keywords and Phrases
Conduction bands; Correlation methods; Electric resistance; Pressure effects; X ray diffraction analysis; Angle dispersive X-ray diffraction measurements; Chalcogenide spinel; Conducting phase; Copper compounds; A. Inorganic compounds; B. X-ray diffraction; C. Electric transport; D. High pressure
International Standard Serial Number (ISSN)
Article - Journal
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