Abstract

Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70-120 °C) by a cyclic adsorption/reaction processes using supercritical CO2 solvent. Precursors included Al(hfac)3, Al(acac)3, and Pd(hfac)2, and aqueous H2O2, tert-butyl peracetate, and H2 were used as the oxidants or reductants. For the precursors studied, growth proceeds through a multilayer precursor adsorption in each deposition cycle, and film thickness increased linearly with the number of growth cycles.

Department(s)

Chemical and Biochemical Engineering

Comments

The authors acknowledge financial support from NSF (Grant No. CTS- 0304296) and the NSF Science and Technology Center for Environmentally Responsible Solvents and Processes.

Keywords and Phrases

Film Thickness Increased Linearly; Metal Oxide And Metal Thin Films; Precursors Included Al(Hfac) 3, Al(Acac) 3, And Pd(Hfac) 2, And Aqueous H2 O2, Tert-Butyl Peracetate; Supercritical, Adsorption; Aluminum Compounds; Carbon Dioxide; Hydrogen; Metallic Films; Oxidation; Palladium; Reduction; Thermal Effects; Thin Films, Supercritical Fluids

International Standard Serial Number (ISSN)

0003-6951

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2006 American Institute of Physics, All rights reserved.

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